Structural and Electrical Properties of Al/ZnONRs/ZnO/p-Si/Al Type MOS Diodes
DOI:
https://doi.org/10.29329/jaasci.2023.562.03Keywords:
C-V, G/ω-V, Hydrothermal method, MOS diode, SEM, ZnO nanorodAbstract
In this study, Al/ZnONRs/ZnO/p-Si/Al type MOS diodes with ZnO nanorods, synthesized by hydrothermal method, were fabricated. The fabricated devices were named as MD10-2, MD10-4, MD20-2, MD20-3 and MD20-4 according to their molar concentration (mM) and the time they were kept in hydrothermal solution (hours). They were produced in different concentrations and times to optimize the electrical properties of the device. The basic electrical parameters of the fabricated structures were investigated by capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at a frequency of 10 kHz at room temperature. The C-2 -V curves obtained from these measurements were used to calculate parameters such as the breakdown voltage (Vo), zero-supply potential barrier height (ΦBo), depletion layer width (WD). Looking at the C-V curves for all structures, it was clearly seen that the aggregation, depletion and reversal regions were formed on the MOS-type diodes. In addition, the effect of interfacial states and series resistance (Rs) were analyzed from the curves. At the same time, the voltage dependent Rs values of MOS type diodes were calculated using the admittance method. According to the calculated data, it was observed that the lower series resistance value was found in MD10-2 with low molar concentration and time. For this reason, it was said that the effect of interfacial states decreased in the MD10-2 device compared to other structures. Finally, the diameter and arrangement of the nanorods were examined by scanning electron microscopy (SEM) of the MOS type diodes. SEM images showed the formation of well-aligned ZnO nanorods for all the fabricated structures.
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